A Guide to Memory Timing: CAS Latency Explained

CAS Latency (CL), or Column Address Strobe Latency, is a core timing parameter of synchronous DRAM (such as DDR4/DDR5). It refers to the number of clock cycles from when the memory controller issues a read command to when data becomes available on the I/O bus, measured in clock cycles with common markings like CL16 or CL18. CL is a key indicator of memory response speed—smaller values mean faster memory response, but the actual latency time (in nanoseconds, ns) must be calculated by combining the memory frequency for a meaningful performance comparison.

1. Core Definition and Working Principle

1.1 Definition

CL measures the number of clock cycles for the transition from “read command → data availability”, and it only applies to column access within an already activated row (CL directly determines column switching latency during consecutive accesses to the same row). For asynchronous DRAM, CL is labeled in absolute time (ns), while synchronous DRAM (SDRAM/DDR) uses clock cycles; the actual latency requires calculation based on the clock frequency.

1.2 Memory Access Process (Taking DDR as an Example)

Row Activation (tRCD): The memory controller sends the row address to activate the target memory row, with the time consumed determined by tRCD (Row to Column Delay).
Column Strobe and CL Wait: After row activation, the column address and read command are sent, and the system waits for CL clock cycles before data starts to output.
Data Transmission: Once CL elapses, data is transmitted continuously at the width of the memory bus (e.g., 64 bits), with a burst length (BL) typically 8 (for DDR) or 16 (for DDR5).

1.3 Key Distinction

CL (clock cycles): Relative latency, which changes with memory frequency.
Actual Latency (ns): Absolute latency, calculated by the formula:Actual Latency (ns) = CL × (1000 / Memory Clock Frequency) × 0.5(DDR memory uses double data rate, so Memory Clock Frequency = Data Rate ÷ 2; e.g., DDR4-3200 has a clock frequency of 1600 MHz).

2. Common Parameters and Conversion Examples

2.1 Comparison Table of Mainstream Memory CL and Actual Latency

Memory Specification	Data Rate (MT/s)	Clock Frequency (MHz)	Typical CL	Actual Latency (ns)
DDR4-2400	2400	1200	16	13.33
DDR4-3200	3200	1600	16	10.00
DDR5-4800	4800	2400	40	16.67
DDR5-6000	6000	3000	36	12.00

2.2 Calculation Example

Example: DDR4-3200 CL16Clock Cycle = 1/1600 MHz = 0.625 nsActual Latency = 16 × 0.625 ns = 10 ns.

3. Relationship with Other Memory Timings

CL is the first parameter in the memory “four timings” (CL-tRCD-tRP-tRAS), which together determine the total memory latency:

Parameter	Meaning	Unit	Impact Scenario
CL	Latency from read command to data availability	Clock Cycles	Consecutive read accesses to the same row
tRCD	Latency from row activation to column command	Clock Cycles	Access latency during row switching
tRP	Latency from row precharge to next row activation	Clock Cycles	Wait time from row closure to new row opening
tRAS	Minimum time from row activation to precharge	Clock Cycles	Row stability and power consumption

Estimation of Total Latency (Random Access)

Total random access latency ≈ tRP (closing the old row) + tRCD (activating the new row) + CL (column access), measured in clock cycles. To convert to ns, multiply by the clock cycle length.

4. Performance Impact and Purchase Recommendations

4.1 Performance Impact

At the same frequency: A smaller CL means faster response, with a noticeable improvement in scenarios sensitive to memory latency such as gaming and rendering.
At different frequencies: Priority should be given to comparing actual latency (ns) rather than just the CL value. For example, DDR5-6000 CL36 (12 ns) may be faster than DDR5-4800 CL40 (16.67 ns).
DDR5 vs. DDR4 comparison: DDR5 has a higher default CL, but the actual latency may be lower due to increased frequency (e.g., DDR5-6000 CL36 vs. DDR4-3200 CL16).

4.2 Purchase and Overclocking Recommendations

Balance frequency and CL: Prioritize combinations of “high frequency + low CL”. If budget is limited, opt for configurations with lower actual latency first.
Compatibility first: Intel/AMD platforms have different upper limits for memory frequency and timing support; refer to the motherboard’s QVL (Qualified Vendor List).
Overclocking notes: Reducing CL requires synchronous adjustment of voltage (VDD, VDDQ) and other timings (tRCD, tRP) to ensure stability. It is recommended to tighten gradually and test with tools like MemTest.

5. Common Misconceptions

Focusing only on CL values: For example, the actual latency of DDR5-4800 CL40 (16.67 ns) is higher than that of DDR4-3200 CL16 (10 ns), so frequency must be considered for calculation.
Ignoring tRCD/tRP: Memory with a low CL but high tRCD/tRP may have poor random access performance.
Confusing asynchronous and synchronous DRAM: The CL of modern DDR memory is the number of clock cycles, not absolute time (ns).

Summary

CL is a core indicator of memory response speed, but its performance must be judged comprehensively by combining actual latency (ns) and other timing parameters. When purchasing memory, it is recommended to prioritize comparing actual latency and ensure compatibility with the motherboard and CPU to balance performance and stability.