Ruigu Electronic

With the rapid increase in the demand for memory frequency and efficiency in generative AI, high – performance computing (HPC) and data centers, the next – generation memory standard DDR6 is moving towards mass – production and popularization. Samsung, Micron, SK Hynix and other major DRAM manufacturers have completed the prototype development of DDR6, and are now working with Intel, AMD, NVIDIA and other CPU/GPU manufacturers to promote platform verification.
DDR6 has achieved a major breakthrough in performance and architecture. Its starting rate is 8800MT/s, and it can reach 17600MT/s during the product life cycle, and the over – clocked module may eventually reach a speed of 21000MT/s, with the overall performance increased by about 2 to 3 times compared with DDR5. In terms of architecture, DDR6 adopts a 4×24 – bit channel design, which has more advantages in parallel processing efficiency, data flow and frequency use than the 2×32 – bit of DDR5, but also puts forward higher requirements for module I/O design.
According to the plan, DDR6 will complete platform certification in 2026, and will be commercially used in the server market first in 2027, and then expand to the consumer – grade market such as high – end laptops.